Investigation of the Effect of Recombination on Superluminescent Light-Emitting Diode Output Power Based on Nitride Pyramid Quantum Dots

In this article, the temperature behavior of output power of superluminescent light-emitting diode (SLED) by considering the effect of non-radiative recombination coefficient, non-radiative spontaneous emission coefficient and Auger recombination coefficients has been investigated. For this aim, GaN pyramidal quantum dots were used as the active region. The numerical method has been used to solve three-dimensional Schrodinger equations and traveling-wave equations. The spectral width of the gain spectrum in each case has been investigated. Eliminating the non-radiative recombination, non-radiative spontaneous emission coefficient and Auger recombination coefficients increased the output power of SLED and in some cases reduced the negative effect of temperature increase on output power.